semix402gal066hds ? by semikron rev. 36 ? 02.12.2008 1 semix ? 2s gal trench igbt modules semix402gal066hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? matrix converter ? resonant inverter ? current source inverter remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? for short circuit: soft r goff recommended ? take care of over-voltage caused by stray inductance absolute maximum ratings symbol conditions values unit igbt v ces 600 v i c t j = 175 c t c =25c 509 a t c =80c 383 a i cnom 400 a i crm i crm = 2xi cnom 800 a v ges -20 ... 20 v t psc v cc = 360 v v ge 15 v t j = 150 c v ces 600 v 6s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 543 a t c =80c 397 a i fnom 400 a i frm i frm = 2xi fnom 800 a i fsm t p = 10 ms, sin 180, t j =25c 1800 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 543 a t c =80c 397 a i fnom 400 a i frm i frm = 2xi fnom 800 a i fsm t p = 10 ms, sin 180, t j =25c 1800 a t j -40 ... 175 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =400a v ge =15v chiplevel t j =25c 1.45 1.9 v t j = 150 c 1.70 2.1 v v ce0 t j =25c 0.9 1 v t j = 150 c 0.85 0.9 v r ce v ge =15v t j =25c 1.4 2.3 m ? t j = 150 c 2.1 3.0 m ? v ge(th) v ge =v ce , i c =6.4ma 5 5.8 6.5 v i ces v ge =0v v ce =600v t j =25c 0.15 0.45 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 24.7 nf c oes f=1mhz 1.54 nf c res f=1mhz 0.73 nf q g v ge =- 8 v...+ 15 v 3200 nc r gint t j =25c 1.00 ?
semix402gal066hds 2 rev. 36 ? 02.12.2008 ? by semikron t d(on) v cc = 300 v i c =400a t j = 150 c r g on =4.5 ? r g off =4.5 ? 150 ns t r 125 ns e on 22 mj t d(off) 900 ns t f 65 ns e off 24 mj r th(j-c) per igbt 0.12 k/w r th(j-s) per igbt k/w inverse diode v f = v ec i f =400a v ge =0v chiplevel t j =25c 1.4 1.6 v t j = 150 c 1.4 1.6 v v f0 t j =25c 0.9 1 1.1 v t j = 150 c 0.75 0.85 0.95 v r f t j =25c 0.8 1.0 1.3 m ? t j = 150 c 1.1 1.4 1.6 m ? i rrm i f =400a di/dt off = 3700 a/s v ge =-8v v cc = 300 v t j = 150 c 250 a q rr t j = 150 c 47 c e rr t j = 150 c 10 mj r th(j-c) per diode 0.15 k/w r th(j-s) per diode k/w freewheeling diode v f = v ec i f =400a v ge =0v chiplevel t j =25c 1.4 1.6 v t j = 150 c 1.4 1.6 v v f0 t j =25c 0.9 1 1.1 v t j = 150 c 0.75 0.85 0.95 v r f t j =25c 0.8 1.0 1.3 m ? t j = 150 c 1.1 1.4 1.6 m ? i rrm i f =400a di/dt off = 3700 a/s v ge =-8v v cc = 300 v t j = 150 c 250 a q rr t j = 150 c 47 c e rr t j = 150 c 10 mj r th(j-c) per diode 0.15 k/w r th(j-s) per diode k/w module l ce 18 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.045 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperature sensor r 100 t c =100c (r 25 =5 k ? ) 0,493 5% k ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol conditions min. typ. max. unit semix ? 2s gal trench igbt modules semix402gal066hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? matrix converter ? resonant inverter ? current source inverter remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? for short circuit: soft r goff recommended ? take care of over-voltage caused by stray inductance
semix402gal066hds ? by semikron rev. 36 ? 02.12.2008 3 fig. 1 typ. output char acteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic
semix402gal066hds 4 rev. 36 ? 02.12.2008 ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 typ. transient thermal impedance fig. 10 typ. cal diode forward charact., incl. r cc'+ee' fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovery charge
semix402gal066hds ? by semikron rev. 36 ? 02.12.2008 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 2s gal
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